分立器件

玻璃封装快恢复二极管
型号抗辐射性能主要功能封装兼容型号
G2CZ5811US对辐照不敏感BV≥160V,IF=6A,trr≤30ns,VF≤0.925V@6AD-5B1N5811US
G2CZ5415USBV≥55V,IF=9A,trr≤150ns,VF≤1.5V@9AD-5B1N5415US
G2CZ5418USBV≥440V,IF=9A,trr≤150ns,VF≤1.5V@9AD-5B1N5418US
G2CZ5806BV≥160V,IF=2.5A,trr≤25ns,VF≤0.975V@2.5ADO-411N5806
G2CZ5806USBV≥160V,IF=2.5A,trr≤25ns,VF≤0.975V@2.5AD-5A1N5806US
G2CZ6642USBV≥75V,IF=300mA,trr≤5nsD-5D1N6642US
*G2CZ0112BV≥1200V,IF=1A,trr≤80nsGlassaxial leadedSDR1N


金属陶瓷封装快恢复二极管
型号抗辐射性能主要功能封装兼容型号
G2CZ2020CU3对辐照不敏感BV≥200V,IF=10ASMD-0.5HFB20HJ20
G2CZ4060CU1BV≥600V,IF=30ASMD-1HFA40HF60CSCS
*G2CZ4560CT6BV≥600V,IF=45ATO-259AAHFA45HI60CSCS
*G2CZ3560CT1BV≥600V,IF=30ATO-254AAHFA35HB60CSCS
*G2CZ35120CT1BV≥1200V,IF=15ATO-254AAHFA35HB120CSCS


玻璃双向抑制瞬态二极管
型号抗辐射性能主要功能封装兼容型号
GBSY6116A对辐照不敏感PPP=500W,VBR ≥25.7V, VRWM=20.6V, IR<1uA, VC<37.4VGlass axial leaded1N6116A
GBSY6125PPP=500W,VBR≥55.8V,VRWM=47.1V,IR<1uA,VC<89.3VGlass axial leaded1N6125
GBSY6126APPP=500W,VBR≥64.6V,VRWM=51.7V,IR<1uA,VC<97.1VGlass axial leaded1N6126A
*GBSY6127APPP=500W,VBR ≥71.3V, VRWM=56.0V, IR<1uA,VC<103.1VGlass axial leaded1N6127A
*GBSY6128APPP=500W,VBR ≥77.9V, VRWM=62.2V, IR<1uA,VC<112.8VGlass axial leaded1N6128A
GBSY6129APPP=500W,VBR ≥86.5V, VRWM=69.2V, IR<1uA,VC<125.1VGlass axial leaded1N6129A


玻璃封装稳压二极管
型号抗辐射性能主要功能封装兼容型号
G2CW4482对辐照不敏感VZ=51V,IR<0.05uA,Pt=1.5W,αvz<0.096%/℃DO-411N4482
G2CW4491VZ=120V,IR<0.25uA,Pt=1.5W,αvz<0.1%/℃DO-411N4491
G2CW4982USVZ=100V,IR<0.25uA,Pt=5W,αvz<0.1%/℃D-5B1N4982US
*G2CW4494USVZ=160V,IR<0.25uA,Pt=1.5W,αvz<0.100%/℃D-5A1N4494US
*G2CW6326USVZ=12V,IR<1.0uA,Pt=0.5W,αvz<0.076%/℃D-5D1N6326US
*G2CW4116USVZ=24V,IR<0.01uA,Pt=0.5W,αvz<0.090%/℃D-5D1N4116UR
*G2CW4489USVZ=100V,IR<0.25uA,Pt=1.5W,αvz<0.099%/℃D-5A1N4489US
*G2CW4492USVZ=130V,IR<0.25uA,Pt=1.5W,αvz<0.100%/℃D-5A1N4492US


玻璃封装肖特基二极管
型号抗辐射性能主要功能封装兼容型号
*G2CK5822对辐照不敏感BV≥40V,IF=3AGlass axial leaded1N5822
*G2CK5822USBV≥40V,IF=3AD-5B1N5822US


NPN双极晶体管
型号抗辐射性能主要功能封装兼容型号
G3DK3500TID≥100KRad(Si)VCBO≥150V,VCEO≥150V,VEBO≥6V,IC=0.3A,β=40-120TO-392N3500
G3DK3501TID≥100KRad(Si)VCBO≥150V,VCEO≥150V,VEBO≥6V,IC=0.3A,β=100-300TO-392N3501
G3DK3501UBTID≥100KRad(Si)VCBO≥150V,VCEO≥150V,VEBO≥6V,IC=0.3A,β=100-300UB2N3501UB
G3DK2219ATID≥100KRad(Si)VCBO≥75V,VCEO≥50V,VEBO≥6V,IC=0.8A,β=100-300TO-392N2219A
G3DK2222ATID≥100KRad(Si)VCBO≥75V,VCEO≥50V,VEBO≥6V,IC=0.8A,β=100-300TO-182N2222A
G3DK2222AUBTID≥100KRad(Si)VCBO≥75V,VCEO≥50V,VEBO≥6V,IC=0.8A,β=100-300UB2N2222AUB
G3DK2369ATID≥100KRad(Si)VCBO≥40V,VCEO≥15V,VEBO≥4.5V,IC=0.2A,β=20-120TO-182N2369A
*G3DK3700UBTID≥100KRad(Si)VCBO≥140V,VCEO≥80V,IC=1A,β=100-300TO-392N3700UB
G3DA3585TID≥100KRad(Si)VCBO≥500V,VCEO≥300V,VEBO≥6V,IC=2A,β=25-100TO-662N3585
G3DA6678TID≥100KRad(Si)VCBO≥650V,VCEO≥400V,VEBO≥8V,IC=15A,β=15-40TO-32N6678
G3DA5672TID≥100KRad(Si)VCBO≥150V,VCEO≥120V,VEBO≥7V,IC=30A,β=20-100TO-32N5672
G3DA5667TID≥100KRad(Si)VCBO≥400V,VCEO≥300V,VEBO≥6V,IC=5A,β=25-75TO-392N5667
*G3DA5667U3TID≥100KRad(Si)VCBO≥400V,VCEO≥300V,VEBO≥6V,IC=5A,β=25-75SMD-0.5--
*G3DA5109TID≥100KRad(Si)VCBO≥40V,VCEO≥20V,VEBO≥3V,IC=400mA,fT≥1.2GHzTO-392N5109


N沟抗辐射 VDMOS器件
型号抗辐射性能主要功能封装兼容型号
*GBCS7587U3RHTID≥100KRad(Si)
SEL≥75MeV∙cm2/mg
BVDSS=100V, ID=22A, RDS(ON)=0.042ΩSMD-0.5IRHNJ67130SCS
*GBCS7591T2RHTID≥100KRad(Si)
SEL≥75MeV∙cm2/mg
BVDSS=200V, ID=9.1A, RDS(ON)=0.145ΩTO-39IRHF67230
*GBCS7269T1RHTID≥100KRad(Si)
SEL≥75MeV∙cm2/mg
BVDSS=200V, ID=26A, RDS(ON)=0.1ΩTO-254JANSR2N7269
*GBCS7269U1RHTID≥100KRad(Si)
SEL≥75MeV∙cm2/mg
BVDSS=200V, ID=26A, RDS(ON)=0.1ΩSMD-1JANSR2N7269U
*GBCS7586U2RHTID≥100KRad(Si)
SEL≥75MeV∙cm2/mg
BVDSS=250V, ID=50A, RDS(ON)=0.040ΩSMD-2IRHNA67264


快恢复二极管阵列
型号抗辐射性能主要功能封装兼容型号
*GBZL1001SS对辐照不敏感BV≥300V,trr≤25ns,VF≤2VCFP16SDA1001SS
*GBZL1005SSBV≥75V,trr≤10ns,VF≤1VCFP16SDA1005SS
*GBZL1006SBV≥200V,trr≤150ns,VF≤1.6VCFP16SDA1006S
*GBZL1008SSBV≥150V,trr≤35ns,VF≤1VCFP16SDA1008SS
*GBZL1009SSBV≥400V,trr≤150ns,VF≤3.2VCFP16SDA1009SS


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